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mosfet metaloxidesemiconductorfieldeffecttransistor optimos?power-transistor,120v optimos?3power-transistor ipd_s110n12n3g datasheet rev.2.4 final industrial&multimarket
ipd110n12n3 g ips110n12n3 g opti mos tm 3power-transistor features n-channel, normal level excellent gate charge x r ds(on) product (fom) very low on-resistance r ds(on) 175 c operating temperature pb-free lead plating; rohs compliant qualified according to jedec 1) for target application halogen free according to iec61249-2-21 * ideal for high-frequency switching and synchronous rectification maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 75 a t c =100 c 54 pulsed drain current 2) i d,pulse t c =25 c 300 avalanche energy, single pulse e as i d =75 a, r gs =25 120 mj gate source voltage 3) v gs 20 v p tot t c =25 c 136 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 3 ) t jmax =150c and duty cycle d=0.01 for v gs <-5v * except package to251-3 value 1) j-std20 and jesd22 2) see figure 3 v ds 120 v r ds(on),max 11 m i d 75 a product summar y type ips110n12n3 g ipd110n12n3 g package pg-to251-3 pg-to252-3 marking 110n12n 110n12n r ev. 2.4 page 1 2015-06-24
ipd110n12n3 g ips110n12n3 g parameter symbol conditions unit min. typ. max. thermal characteristicsthermal resistance, junction - case r thjc - - 1.1 k/w r thja minimal footprint - - 75 6 cm 2 cooling area 4) --5 0 electrical characteristics, at t j =25 c, unless otherwise specified static characteristicsdrain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 120 - - v gate threshold voltage v gs(th) v ds = v gs , i d =83 a 234 zero gate voltage drain current i dss v ds =100 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =100 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =75 a - 9.2 11 m gate resistance r g - 1.5 - transconductance g fs | v ds |>2| i d | r ds(on)max , i d =75 a 42 83 - s values 4) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. thermal resistance, junction - ambient rev. 2.4 page 2 2015-06-24
ipd110n12n3 g ips110n12n3 g parameter symbol conditions unit min. typ. max. d y namic characteristics 6) input capacitance c iss - 3240 4310 pf output capacitance c oss - 408 543 reverse transfer capacitance c rss -2 2- turn-on delay time t d(on) -1 6-n s rise time t r -1 6- turn-off delay time t d(off) -2 4- fall time t f -8- gate char g e characteristics 5) gate to source charge q gs -1 8-n c gate to drain charge q gd -1 2- switching charge q sw -2 0- gate charge total 6) q g -4 96 5 gate plateau voltage v plateau - 5.6 - v output charge 6) q oss v dd =60 v, v gs =0 v -5 67 5 n c reverse diodediode continous forward current i s - - 75 a diode pulse current i s,pulse - - 300 diode forward voltage v sd v gs =0 v, i f =75 a, t j =25 c - 1 1.2 v t rr -9 0 n s reverse recovery charge q rr - 249 nc 5) see figure 16 for gate charge parameter definition 6) defined by design. not subject to production test v r =60 v, i f = i s , d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =60 v, f =1 mhz v dd =60 v, v gs =10 v, i d =75 a, r g,ext =1.6 v dd =60 v, i d =75 a, v gs =0 to 10 v rev. 2.4 page 3 2015-06-24
ipd110n12n3 g ips110n12n3 g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 10 1 z thjc [k/w] t p [s] 0 20 40 60 80 100 120 140 0 50 100 150 200 p tot [w] t c [ c] 0 10 20 30 40 50 60 70 80 0 50 100 150 200 i d [a] t c [ c] 1 s 10 s 100 s 1 ms 10 ms dc 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 i d [a] v ds [v] rev. 2.4 page 4 2015-06-24
ipd110n12n3 g ips110n12n3 g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 4.5 v 5 v 5.5 v 6 v 10 v 0 5 10 15 20 25 30 0 2 04 06 08 0 r ds(on) [m ] i d [a] 25 c 175 c 0 50 100 150 200 02468 i d [a] v gs [v] 0 20 40 60 80 100 0 2 04 06 08 0 g fs [s] i d [a] 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 0 50 100 150 200 250 012345 i d [a] v ds [v] rev. 2.4 page 5 2015-06-24
ipd110n12n3 g ips110n12n3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =75 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 5 10 15 20 25 -60 -20 20 60 100 140 180 r ds(on) [m ] t j [ c] 83 a 830 a 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] ciss coss crss 10 1 10 2 10 3 10 4 0 2 04 06 08 01 0 0 c [pf] v ds [v] 25 c 175 c 25 c, 98% 175 c, 98% 10 0 10 1 10 2 10 3 0 0.5 1 1.5 2 i f [a] v sd [v] rev. 2.4 page 6 2015-06-24
ipd110n12n3 g ips110n12n3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 v gs =f( q gate ); i d =67 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 24 v 60 v 96 v 0 2 4 6 8 10 0 1 02 03 04 05 0 v gs [v] q gate [nc] 105 110 115 120 125 130 135 -60 -20 20 60 100 140 180 v br(dss) [v] t j [ c] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 i as [a] t av [s] rev. 2.4 page 7 2015-06-24
ipd110n12n3 g ips110n12n3 g pg-to-251sl : outline rev. 2.4 page 8 2015-06-24
ipd110n12n3 g ips110n12n3 g pg-to252-3: outline rev. 2.4 page 9 2015-06-24
11 optimos?3power-transistor ipd_s110n12n3g rev.2.4,2015-07-16 revisionhistory ipd_s110n12n3 g revision:2015-07-16,rev.2.4 previous revision revision date subjects (major changes since last revision) 2.4 2015-07-16 update vgs(th) and package outline to252-3 welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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